V-MOS-P-FET,100V,6.5A,39W,<0.48om(3.9A),TO-252AA,code: FR9120N ,Infineon / IR,IRFR9120NTRPBF Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: TO-252-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 6.5 A Rds On - Drain-Source Resistance: 480 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 4 V Qg - Gate Charge: 27 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 39 W Channel Mode: Enhancement Configuration: Single Height: 2.3 mm Length: 6.5 mm Transistor Type: 1 P-Channel Type: Preliminary Width: 6.22 mm Brand: Infineon / IR Fall Time: 31 ns Product Type: MOSFET Rise Time: 47 ns Factory Pack Quantity: 2000 Subcategory: MOSFETs Typical Turn-Off Delay Time: 28 ns Typical Turn-On Delay Time: 14 ns Unit Weight: 4 g