Si-N,NF-E,Hi-Fi,180V,15A,150W,10MHz,TO-3PL/TO-264,2SD2155 Toshiba 2SC3281, 2SC4029, 2SD1975 Manufacturer: Toshiba Product Category: Bipolar Transistors - BJT Mounting Style: Through Hole Package/Case: TO-3P-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 180 V Collector- Base Voltage VCBO: 180 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 15 A Gain Bandwidth Product fT: 10 MHz Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C DC Current Gain hFE Max: 160 Continuous Collector Current: 15 A DC Collector/Base Gain hFE Min: 35 Pd - Power Dissipation: 150 W Unit Weight: 7 g