Каталожен номер: 162107
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Si-N,NF-E,Hi-Fi,230/230V,15A,150W,30MHz,TO-247AB,C5200N Toshiba
Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-247AB
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 230 V
Collector- Base Voltage VCBO: 230 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.4 V
Maximum DC Collector Current: 15 A
Gain Bandwidth Product fT: 30 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 160
Continuous Collector Current: 15 A
DC Collector/Base Gain hFE Min: 35
Pd - Power Dissipation: 150 W
Unit Weight: 7 g
Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-247AB
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 230 V
Collector- Base Voltage VCBO: 230 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 0.4 V
Maximum DC Collector Current: 15 A
Gain Bandwidth Product fT: 30 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
DC Current Gain hFE Max: 160
Continuous Collector Current: 15 A
DC Collector/Base Gain hFE Min: 35
Pd - Power Dissipation: 150 W
Unit Weight: 7 g
Si-N,NF-E,Hi-Fi,230/230V,15A,150W,30MHz,TO-247AB,C5200N Toshiba
- Фабричен номер: 2SC 5200 N
- Производител Toshiba
- Наличност: На склад
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4.60€ / 9.00 лв.