Каталожен номер: 66587
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.
Si-P, NF-E,40V,1.5A,1W,120MHz, TO-92, coed: S8550D , Fairchild Semiconductor CD8550,Samsung/KEC SS8550D
MPS750/1; 2SB911 ;2SB978; 8550C;2SB892
Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-92-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 25 V
Collector- Base Voltage VCBO: 40 V
Emitter- Base Voltage VEBO: 6 V
Maximum DC Collector Current: 1.5 A
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 150 C
Series: SS8550
Brand: onsemi / Fairchild
Continuous Collector Current: 1.5 A
DC Collector/Base Gain hFE Min: 85
DC Current Gain hFE Max: 300
Height: 4.7 mm
Length: 4.7 mm
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 3.93 mm
Unit Weight: 240 mg
MPS750/1; 2SB911 ;2SB978; 8550C;2SB892
Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-92-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 25 V
Collector- Base Voltage VCBO: 40 V
Emitter- Base Voltage VEBO: 6 V
Maximum DC Collector Current: 1.5 A
Pd - Power Dissipation: 1 W
Gain Bandwidth Product fT: 200 MHz
Maximum Operating Temperature: + 150 C
Series: SS8550
Brand: onsemi / Fairchild
Continuous Collector Current: 1.5 A
DC Collector/Base Gain hFE Min: 85
DC Current Gain hFE Max: 300
Height: 4.7 mm
Length: 4.7 mm
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Width: 3.93 mm
Unit Weight: 240 mg
Si-P, NF-E,40V,1.5A,1W,120MHz, TO-92, coed: S8550D , Fairchild Semiconductor CD8550,Samsung/KEC SS8550D
- Фабричен номер: SS 8550 D
- Производител Samsung
- Наличност: На склад
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1.50 лв.