Каталожен номер: 173261
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.
HiPer FET-N-HDMOS,500V,22A,300W,<0.27om(10A),Trr<40nS,TO-247SF ,IXYS IXFH22N55
Manufacturer: IXYS
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 550 V
Id - Continuous Drain Current: 22 A
Rds On - Drain-Source Resistance: 270 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 40 ns
Forward Transconductance - Min: 18 S
Height: 21.46 mm
Length: 16.26 mm
Product Type: MOSFET
Rise Time: 43 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 70 ns
Typical Turn-On Delay Time: 20 ns
Width: 5.3 mm
Unit Weight: 6 g
Manufacturer: IXYS
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 550 V
Id - Continuous Drain Current: 22 A
Rds On - Drain-Source Resistance: 270 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 300 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 40 ns
Forward Transconductance - Min: 18 S
Height: 21.46 mm
Length: 16.26 mm
Product Type: MOSFET
Rise Time: 43 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 70 ns
Typical Turn-On Delay Time: 20 ns
Width: 5.3 mm
Unit Weight: 6 g
HiPer FET-N-HDMOS,500V,22A,300W,<0.27om(10A),Trr<40nS,TO-247SF ,IXYS IXFH22N55
- Фабричен номер: IXFH 22N55
- Производител Ixys
- Проблемна е доставката на този продукт
-
Възможност за доставка и цена само при запитване.