MOS-N-FET ,RF Power,66V,Idq 450-600mA,Pout-60W,1 GHz,PQ=14W/880MHz, 9.8dB,TO-270/2 ,NXP MRFE6S9060NR1,code: ME6960N
RF MOSFET Transistors HV6E 60W TO270-2N FET ,MRFE6S9060NR1 ,NXP code: ME6960N
Manufacturer: NXP
Product Category: RF MOSFET Transistors
RoHS: Details
Transistor Polarity: N-Channel
Technology: Si
Vds - Drain-Source Breakdown Voltage: 66 V
Operating Frequency: 1 GHz
Gain: 21.1 dB
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package/Case: TO-270
Brand: NXP Semiconductors
Channel Mode: Enhancement
Configuration: Single
Height: 2.08 mm
Length: 9.7 mm
Moisture Sensitive: Yes
Product Type: RF MOSFET Transistors
Series: MRFE6S9060NR1
Subcategory: MOSFETs
Type: RF Power MOSFET
Vgs - Gate-Source Voltage: - 0.5 V, 12 V
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Width: 6.15 mm
Unit Weight:  529,550 mg