N-Cahnnel, QFET-DMOS, 900V, 6A, 167W, <2.3om(3.8A), TO-220,Fairchild FQP6N90C
Transistor FQP6N90C Fairchild N-MOSFET; unipolar; 900V; 6.0A; 167W; TO220AB
Manufacturer:ON Semiconductor
Product Category:MOSFET
Technology:Si
Mounting Style:Through Hole
Package/Case:TO-220-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:900 V
Id - Continuous Drain Current:6 A
Rds On - Drain-Source Resistance:2.3 Ohms
Vgs - Gate-Source Voltage:30 V
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:167 W
Configuration:Single
Channel Mode:Enhancement
Tradename:QFET
Height:16.3 mm
Length:10.67 mm
Series:FQP6N90C
Transistor Type:1 N-Channel
Type:MOSFET
Width:4.7 mm
Brand:ON Semiconductor / Fairchild
Forward Transconductance - Min:5.5 S
Fall Time:60 ns
Product Type:MOSFET
Rise Time:90 ns
Subcategory:MOSFETs
Typical Turn-Off Delay Time:55 ns
Typical Turn-On Delay Time:35 ns
Part # Aliases:FQP6N90C_NL
Unit Weight:1,800 g