N-Cahnnel,QFET-DMOS,900V,6A,167W,<2.3om(3.2A),TO-220,FQP6N90C Fairchild Transistor FQP6N50C Fairchild N-MOSFET; unipolar; 900V; 3.8A; 167W; TO220AB Manufacturer:ON Semiconductor Product Category:MOSFET Technology:Si Mounting Style:Through Hole Package/Case:TO-220-3 Number of Channels:1 Channel Transistor Polarity:N-Channel Vds - Drain-Source Breakdown Voltage:900 V Id - Continuous Drain Current:6 A Rds On - Drain-Source Resistance:2.3 Ohms Vgs - Gate-Source Voltage:30 V Minimum Operating Temperature:- 55 C Maximum Operating Temperature:+ 150 C Pd - Power Dissipation:167 W Configuration:Single Channel Mode:Enhancement Tradename:QFET Height:16.3 mm Length:10.67 mm Series:FQP6N90C Transistor Type:1 N-Channel Type:MOSFET Width:4.7 mm Brand:ON Semiconductor / Fairchild Forward Transconductance - Min:5.5 S Fall Time:60 ns Product Type:MOSFET Rise Time:90 ns Subcategory:MOSFETs Typical Turn-Off Delay Time:55 ns Typical Turn-On Delay Time:35 ns Part # Aliases:FQP6N90C_NL Unit Weight:1,800 g