Dual N-MOS-FET,30V,6.0A,2.0W,<0.024om(3.9A),8-MDIP/SOIC,code:E6N03 ON Semiconductors Transistor NTMD6N03R2 SOIC8 ONS,0505-001791 Samsung Manufacturer: ON Semiconductor Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package/Case: SOIC-8 Number of Channels: 2 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 6 A Rds On - Drain-Source Resistance: 32 mOhms Vgs - Gate-Source Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 2 W Configuration: Dual Channel Mode: Enhancement Height: 1.5 mm Length: 5 mm Series: NTMD6N03 Transistor Type: 2 N-Channel Type: MOSFET Width: 4 mm Brand: ON Semiconductor Forward Transconductance - Min: 10 S Fall Time: 34 ns, 45 ns Product Type: MOSFET Factory Pack Quantity: 2500 Subcategory: MOSFETs Typical Turn-Off Delay Time: 22 ns, 45 ns Typical Turn-On Delay Time: 13 ns, 9 ns Unit Weight: 187 mg