Power MOS-N-FET,600V,47A,379W,0.065Om(20A),228nS, TO-247 ,Vishay SIHG47N60EF-GE3 ,code: G47N60EF
Mos Fet Transistor TO-247 ,Vishay SiHG47N60EF , code: G47N60EF ,SIHG47N60EF-GE3
Manufacturer: Vishay
Product Category: MOSFETs
REACH - SVHC:
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 47 A
Rds On - Drain-Source Resistance: 65 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 228 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 379 W
Channel Mode: Enhancement
Brand: Vishay / Siliconix
Configuration: Single
Height: 20.82 mm
Length: 15.87 mm
Product Type: MOSFETs
Series: SIHG EF
Subcategory: Transistors
Width: 5.31 mm
Unit Weight: 6 g