Диоди Si-Di
Si-Di,Hyperfast ,600V,8A,40nS,TO-220/2,катод на корпус,BYC8D-600,127 WeEn Semiconductors
Si-Di,Hyperfast ,600V,8A,40nS,TO-220/2,катод на корпус,BYC8D-600,127 WeEn SemiconductorsBYC8D-600,12..
2.28 лв.
Si-Di,GL,1200V,50A,50Hz,d17x15mm,M6x11mm,с каб.обувка,катод на коруса ,ZP50A/1200V-C
Si-Di,GL,1200V,50A,50Hz,d17x15mm,M6x11mm,с каб.обувка,катод на коруса ,ZP50A/1200V-CSi-Di, GL, 1200V..
10.00 лв.
Si-Di ,Rectifiers ,600V 1A, 250nS,Ufmax 1.3V ,1.20W ,Ifsm-30A, SMA/DO-214AC ,RS1J ONS/Fairchild
Si-Di ,Rectifiers ,600V 1A, 250nS,Ufmax 1.3V ,1.20W ,Ifsm-30A, SMA/DO-214AC ,RS1J ONS/FairchildДиод:..
0.30 лв.
Si-Di, 1000V,1A,Ifsm- 30A,SMA,code: M7,1N4007(M7) ,smd S1M .SM/YANGJIE TECHNOLOGY
Si-Di, 1000V,1A,Ifsm- 30A,SMA,code: M7,1N4007(M7) ,smd S1M .SM TECHNOLOGY1000V 1A UFM1.1V/1A IFM30A ..
0.24 лв.
Dual - Si-DI, UltraFast, GL/S-L, 200V,30A,(Tc=120°),<50nS, TO-220F Fairchild
Dual - Si-DI, UltraFast, GL/S-L, 200V,30A,(Tc=120°),..
6.00 лв.
Si-Di, Gl, UNI, 1000V, 1A,SMA /SMD ,SM TECHNOLOGY 1N4007 ,code:M7
Si-Di, Gl, UNI, 1000V, 1A,SMA /SMD ,SM TECHNOLOGY 1N4007 ,code:M7General Purpose 1N4007(M7) SMD SM 1..
0.30 лв.
Si-Di,GI,1000V,3A,DO-201 ,SM Technology/MIC 1N5408
Si-Di,GI,1000V,3A,DO-201 ,SM Technology/MIC 1N5408Housing Type: DO-27Manufacturer: Diodes Incorporat..
0.30 лв.
Si-Di ,Rectifier Diode, 3A, 600V,250nS ,SMD , DO-214AC ,Shindengen 3FV60
Si-Di ,Rectifier Diode, 3A, 600V,250nS ,SMD , DO-214AC ,Shindengen 3FV603FV60 SMD DIOD ,Rectifier Di..
1.00 лв.
Si-Di ,Rectifier Diode, 3A, 600V,250nS ,SMD , DO-214AB ,Fagor FRS3J TRTB
Si-Di ,Rectifier Diode, 3A, 600V,250nS ,SMD , DO-214AB ,Fagor FRS3J TRTBДиод: изправителен; SMD; 600..
1.00 лв.
Si-Di,S-L,600V,If(av)-15A,If(rms)-150A,Ifvf-30A,<50nS, ultra-fast, TO-220FP ,STMicroelectronics STTH15R06FP
Si-Di,S-L,600V,If(av)-15A,If(rms)-150A,Ifvf-30A,..
5.00 лв.
Si-Di,SS,100/75V,0.2/0.15A,0.5W<4nS,SOD-123, 1N4148W Micro commersial componen
Si-Di,SS,100/75V,0.2/0.15A,0.5W..
0.24 лв.