SS,imp,30V,8mA,d4x12mm

SS,imp,30V,8mA,d4x12mm..

0.04 лв.

100V,0.3A,0.0024MHz

100V,0.3A,0.0024MHz..

0.02 лв.

Diode,Ga-As,Ip=100mA,Up=0.33V,Ur=0.5V,C=20pF,d4x2mm

Diode,Ga-As,Ip=100mA,Up=0.33V,Ur=0.5V,C=20pF,d4x2mm..

0.40 лв.

Diode,Ga-As,Ip=10mA,Up=0.18V,Ur=0.8V,Ir=5.5mA,C=50pF,d4x2mm

Diode,Ga-As,Ip=10mA,Up=0.18V,Ur=0.8V,Ir=5.5mA,C=50pF,d4x2mm..

1.20 лв.

Si-Di,Dual,S,40V,0.1A,<100nS,SOT-23,SMD,code:M2F Matsushita

Si-Di,Dual,S,40V,0.1A,..

Si-Di,S-L,600V,15A,(Tc=150°),<60nS,TO-220

Si-Di,S-L,600V,15A,(Tc=150°),..

3.90 лв.

Ultra fast recovery,S-L,1000V,17A,(Tc=85°),40-60nS,78W,TO-220AC

Ultra fast recovery,S-L,1000V,17A,(Tc=85°),40-60nS,78W,TO-220AC..

Si-Di-Dual,GL/S-L,200V,30A,(Tc=150°),<35nS,TO-3P,MUR3020PT

Si-Di-Dual,GL/S-L,200V,30A,(Tc=150°),..

7.74 лв.

Si-Di,Dual,Ultrafast,GL/S-L,600V,30A/2x15A,(Tc=150°),<60nS,TO-218AC,MUR3060PT-BP Micro Commercial Components (MCC)

Si-Di,Dual,Ultrafast,GL/S-L,600V,30A/2x15A,(Tc=150°),..

10.80 лв.

Ultra fast recovery,S-L,500V,8A,(Tc=85°),<50nS,75W,TO-220AC

Ultra fast recovery,S-L,500V,8A,(Tc=85°),..

Si-Di ,Ultra fast recovery,S-L,600V,8A,(Tc=85°),<50nS,75W,TO-220AC,Taiwan Semiconductor MUR860

Si-Di ,Ultra fast recovery,S-L,600V,8A,(Tc=85°),..

6.00 лв.

Si-Di ,Ultra fast recovery,S-L,600V,8A,(Tc=85°),<50nS,75W,TO-220AC,NFE14G-U860,ON Semi. MUR860G

Si-Di ,Ultra fast recovery,S-L,600V,8A,(Tc=85°),..

6.00 лв.

Dual-Si-Di,S , Ultrafast,200V,12A,35ns,общ анод,TO-220 Mospec ,code: U12C20A

Dual-Si-Di,S , Ultrafast,200V,12A,35ns,общ анод,TO-220 Mospec ,code: U12C20AFast / Ultrafast Diode, ..

4.80 лв.

Si-Di-Dual,S,Ultrafast,200V,12A,35ns,общ катод,TO-220 Mospec ,code: P/U12C20C

Si-Di-Dual,S,Ultrafast,200V,12A,35ns,общ катод,TO-220 Mospec ,code: P/U12C20C..

4.80 лв.

Dual,GL/S-L,100V,40A,<50nS,TO-3

Dual,GL/S-L,100V,40A,..