SMPS IGBT,L,600V,40A(25°C),220W,5ns,up 150kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B60PD

SMPS IGBT,L,600V,40A(25°C),220W,5ns,up 150kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B60PD..

30.00 лв.

IGBT-N,L,600V,24/48A(25°C),250W,24-40ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,IRGP4062DP

IGBT-N,L,600V,24/48A(25°C),250W,24-40ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,IRGP4062DP..

24.00 лв.

IGBT-N chan,600V,22A(25°C),104-156W,Tf=32nS,-40°C...+175°C,TO-263/D2-Pak,IR IRGS10B60KDTRRPBF

IGBT-N chan,600V,22A(25°C),104-156W,Tf=32nS,-40°C...+175°C,TO-263/D2-Pak,IR IRGS10B60KDTRRPBFManufac..

16.20 лв.

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=82nS,TO-247 isoplus Ixys

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=82nS,TO-247 isoplus Ixys IXGR40N60B2D1 - IGBT Sin..

36.00 лв.

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=32nS,TO-247 isoplus,Ixys

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=32nS,TO-247 isoplus,Ixys Housing Type: TO-247 Manu..

21.84 лв.

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),330W,Tf=99nS(150°C),TO-247,H20R1202 Infineon

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),330W,Tf=99nS(150°C),TO-247,H20R1202 Infineon..

15.00 лв.

IGBT-N chan,SMPS-ser.,1200V,63A(25°C)/30A(110°C),390W,Tf=340nS(150°C),TO-247,20N120CND Fairchild

IGBT-N chan,SMPS-ser.,1200V,63A(25°C)/30A(110°C),390W,Tf=340nS(150°C),TO-247,20N120CND FairchildH931..

13.20 лв.

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/60A(110°C),463W,Tf=38nS(150°C),TO-247

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/60A(110°C),463W,Tf=38nS(150°C),TO-247..

MOS-IGBT-N chan,SMPS-ser.,600V,75A(25°C)/60A(110°C),463W,Tf=38nS(150°C),TO-247,G30N60A4D Fairchild

MOS-IGBT-N chan,SMPS-ser.,600V,75A(25°C)/60A(110°C),463W,Tf=38nS(150°C),TO-247,G30N60A4D FairchildПр..

14.70 лв.

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/60A(110°C),463W,Tf=38nS(150°C),TO-247

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/60A(110°C),463W,Tf=38nS(150°C),TO-247..

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/63A(110°C),625W,Tf=55nS(150°C),TO-247,code:40N60A4 Fairchild ,HGTG40N60A4

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/63A(110°C),625W,Tf=55nS(150°C),TO-247,code:40N60A4 Fairchild ,H..

18.00 лв.

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),330W,Tf=99nS(150°C),TO-247,code: H20R1202 Infineon IHW20N120R2

IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),330W,Tf=99nS(150°C),TO-247,code: H20R1202 In..

15.00 лв.

V-MOS,P-cha,+Integr.diode-80nS,100V,6A,20W,0.58om(5A),9-33nS,TO-220F Mitsubishi

V-MOS,P-cha,+Integr.diode-80nS,100V,6A,20W,0.58om(5A),9-33nS,TO-220F Mitsubishi..

V-MOS,100V,10A,100W,<0.35om(5A),TO-3P

V-MOS,100V,10A,100W,..

40.32 лв.

V-MOS-P-FET-e, LogL,180V,1A,TO-220F,Toshiba J313Y , SONY TA-F333 ESJ

V-MOS-P-FET-e, LogL,180V,1A,TO-220F,Toshiba J313Y , SONY TA-F333 ESJ2SJ313Y ,8-729-018-21 Toshiba J3..

18.00 лв.