Транзистори MOS-N-IGBT-d
IGBT-N chan,1200V,30A,192W,Tf=14nS,TO-247,code:30N120IHS ON Semi. NGTB30N120IHSW
IGBT-N chan,1200V,30A,192W,Tf=14nS,TO-247,code:30N120IHS ON Semi. NGTB30N120IHSW ON SEMICONDUCTOR N..
20.00 лв.
IGBT-N chan,1200V,60A,175W,Tf=14nS,TO-247,STMicroelectronics GW30N120KD
IGBT-N chan,1200V,60A,175W,Tf=14nS,TO-247,STMicroelectronics GW30N120KD code:GW30N120KD,STGW30N120KD..
10.56 лв.
IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),330W,Tf=99nS(150°C),TO-247,H20R120 Infineon
IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),330W,Tf=99nS(150°C),TO-247,H20R120 Infineon ..
15.00 лв.
IGBT-N field stop,600V,120A,600W,Tf=33/65nS (125°C),-55..+175°C ,TO-247,Fairchild FGH60N60SFDTU-F085,code: FGH60N60SFD
IGBT-N field stop,600V,120A,600W,Tf=33/65nS (125°C),-55..+175°C ,TO-247,Fairchild FGH60N60SFDTU-F085..
18.00 лв.
IGBT-N chan,reverse conduct.,1350V,40A(25°C)/20A(110°C),310W,Tf=454nS(150°C),TO-247,H20R1353 Infineon
IGBT-N chan,reverse conduct.,1350V,40A(25°C)/20A(110°C),310W,Tf=454nS(150°C),TO-247,H20R1353 Infineo..
15.00 лв.
IGBT-N chan,reverse conduct.,1350V,60A,349W,Tf=263nS,TO-247,code:H30PR3, Infineon IHW30N135R3XKSA1
IGBT-N chan,reverse conduct.,1350V,60A,349W,Tf=263nS,TO-247,code:H30PR3, Infineon IHW30N135R3XKSA1 I..
15.00 лв.
IGBT-N chan,reverse conduct.,1100V,30A,166W,Tf=180nS,TO-247,H30R1103 Infineon
IGBT-N chan,reverse conduct.,1100V,30A,166W,Tf=180nS,TO-247,H30R1103 Infineon IHW30N110R3FKSA1 ,Infi..
8.40 лв.
IGBT-N field stop,600V,120A,600W,Tf=77nS(125°C),TO-247,Fairchild FGH60N60SMD
IGBT-N field stop,600V,120A,600W,Tf=77nS(125°C),TO-247,Fairchild FGH60N60SMDПроизводител ON SEMICON..
18.00 лв.
IGBT-N chan,reverse conduct.,1350V,60A,349W,Tf=263nS,TO-247,code: H30PR5 ,Infineon IHW30N135R5XKSA1
IGBT-N chan,reverse conduct.,1350V,60A,349W,Tf=263nS,TO-247,code: H30PR5 ,Infineon IHW30N135R5XKSA1I..
15.00 лв.
IGBT-N chan,SMPS-ser.,600V,80A(25°C)/40A(100°C),290W,Tf=80nS(150°C),TO-247/TO-3P,code: 40N60NPFD Silan Microelectronics
IGBT-N chan,SMPS-ser.,600V,80A(25°C)/40A(100°C),290W,Tf=80nS(150°C),TO-247/TO-3P,code: 40N60NPFD Sil..
9.60 лв.
IGBT-N ,1200V,40A, 277W,Tf=370nS(125°C),TO-247 ,ONSemi. FGH40T12060SMD
IGBT-N ,1200V,40A, 277W,Tf=370nS(125°C),TO-247 ,ONSemi. FGH40T12060SMDПроизводител ON SEMICONDUCTOR..
21.00 лв.
IGBT-N chan,ultra-fast, 600V, 40A(25°C)/20A(100°C),160W,Tf=37nS (125°C), TO-220 ,Fairchild SGP40N60UF ,code:G40N60UF
IGBT-N chan,ultra-fast, 600V, 40A(25°C)/20A(100°C),160W,Tf=37nS (125°C), TO-220 ,Fairchild SGP40N60U..
5.50 лв.
IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),288W,Tf=454nS(150°C),TO-247 ,H20МR5 Infineon IHW20N120R5XKSA1
IGBT-N chan,reverse conduct.,1200V,40A(25°C)/20A(110°C),288W,Tf=454nS(150°C),TO-247 ,H20МR5 Infineon..
15.00 лв.
IGBT-N channel ,reverse conduct.,1350V,25A(25°C)/10A(110°C),310W,Tf=454nS(150°C),TO-247 ,YGW 25N135 F1 JXCWGOO
IGBT-N chan,reverse conduct.,1350V,40A(25°C)/20A(110°C),310W,Tf=454nS(150°C),TO-247,H20R1353 Infineo..
10.00 лв.
IGBT-N ,1200V,40A, 277W,Tf=370nS(125°C),TO-247 ,MagnaChip. MBQ40T120FES,code: 40T120FES
IGBT-N ,1200V,40A, 277W,Tf=370nS(125°C),TO-247 ,MagnaChip. MBQ40T120FES,code: 40T120FESIGBT-N ,1200V..
15.00 лв.