Транзистори MOS-N-IGBT
IGBT-N channel,360V,35A(25°C),25W, Tf=0.15uS,TO-220F ,Renesas RJP30Y2A ,RJP30Y2ADPE
IGBT-N channel,360V,35A(25°C),25W, Tf=0.15uS,TO-220F ,Renesas RJP30Y2A ,RJP30Y2ADPETransistors RJP30..
6.00 лв.
IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D4-H
IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D4-HT..
25.00 лв.
IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D1-B
IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D4-HT..
25.00 лв.
IGBT-N,L,600V,75A(25°C), 454W, 50-70ns, up 20kHz,+ ultrafast soft recovery diode,TO-247AC,IR IRGP4066DP ,code:GP4066D
IGBT-N,L,600V,75A(25°C), 454W, 50-70ns, up 20kHz,+ ultrafast soft recovery diode,TO-247AC,IR IRGP406..
15.00 лв.
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-247 ,code: G30H603 , Infineon IGW30N60H3FKSA1
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-247 ,code: G30H603 , Infineon IGW30N60H3FKSA1I..
18.00 лв.
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,1MBH50D-060A Fuji
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,1MBH50D-060A FujiFuji 1M..
13.00 лв.
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,1MBH50D-060 Fuji
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,1MBH50D-060 FujiFuji 1MB..
13.00 лв.
MOS-N-IGBTi+Di, HiPerFAST,600V,16A,40A-at 25°C,150W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH16N60B2D1
MOS-N-IGBTi+Di, HiPerFAST,B2-Class High Speed 600V,16A,40A-at 25°C,150W,Tf=50nS,40-100kHz,TO-247 Ixy..
12.00 лв.