Транзистори MOS-N-IGBT
IGBT-N-ch MOSFET+Di,330V,50A,120W,0.15uS,TO-247SF,Renesas
IGBT-N-ch MOSFET+Di,330V,50A,120W,0.15uS,TO-247SF,Renesas..
IGBT-N chan+Diode,300V,60A(25°C)/56A(110°C),125W,Tf=75nS(150°C),TO-247S,Renesas
IGBT-N chan+Diode,300V,60A(25°C)/56A(110°C),125W,Tf=75nS(150°C),TO-247S,Renesas..
IGBT-P chan,330V,50A(25°C),120W,Tf=150nS,TO-247S,Renesas
IGBT-P chan,330V,50A(25°C),120W,Tf=150nS,TO-247S,Renesas..
IGBT-N chan.for strobe flash,400V,150A(70°C),1.6W,Cm-100uF,8-MDIP(TSOJ-8),Renesas
IGBT-N chan.for strobe flash,400V,150A(70°C),1.6W,Cm-100uF,8-MDIP(TSOJ-8),Renesas..
16.08 лв.
IGBT-N chan,600V,10A,16A(25°C),75W,Tf=36-158nS,TO-220AC,10N60-ONS
IGBT-N chan,600V,10A,16A(25°C),75W,Tf=36-158nS,TO-220AC,10N60-InfineonManufacturer: ON Semiconductor..
5.52 лв.
IGBT-N chan,600V,41A,30A(25°C),250W,Tf=93-419nS,TO-220AC,code: G30N60HS , Infineon SGP30N60 /SGP30N60HS
IGBT-N chan,600V,41A,30A(25°C),250W,Tf=93-419nS,TO-220AC,code: G30N60HS , Infineon SGP30N60 /SGP30N6..
6.60 лв.
IGBT-N chan+diode,NPT-tech.,600V,41A(25°C)/30A(100°C),250W,Tf=58-70nS,TO-247AC,K30N60-Infineon
IGBT-N chan+diode,NPT-tech.,600V,41A(25°C)/30A(100°C),250W,Tf=58-70nS,TO-247AC,K30N60-InfineonSKW30N..
17.76 лв.
IGBT-for strobe flashs,N-ch MOSFET,4V-drive,400V,Icp-150A,TSSOP-8/8-SMDIP,Sanyo
TRANSISTOR TIG022TS-S-TL-E..
21.12 лв.
IGBT-N-ch MOSFET,1000V,60A,170W,0.25Us,TO-264,Toshiba
IGBT-N-ch MOSFET,1000V,60A,170W,0.25Us,TO-264,Toshiba..
46.94 лв.
IGBT-N chan+diode,NPT-tech.,600V,41A(25°C)/30A(100°C),250W,Tf=25nS,TO-247AC,code: K30N60HS-Infineon ,SKW30N60HS
IGBT-N chan+diode,NPT-tech.,600V,41A(25°C)/30A(100°C),250W,Tf=25nS,TO-247AC,code: K30N60HS-Infineon ..
18.00 лв.
IGBT-for strobe flashs,N-ch MOSFET,400V,100A,1.1W,TSSOP-8/8-SMDIP,TIG062E8
TR TIG062E8-TL-H,for strobe from DSC-WX9..
17.14 лв.
IGBT-for strobe flashs,N-ch MOSFET,400V,100A,1.1W,TSSOP-8/8-SMDIP,TIG062E8
TR TIG062E8-TL-H,for strobe from DSC-WX9..
15.96 лв.
IGBT-N chan,SMPS-ser.,600V,70A(25°C)/56A(110°C),290W,Tf=38nS(150°C),TO-3P,25N50G Fuji
FMH25N50G 25N50G (FMH25N50G)..
IGBT-N-ch MOSFET,900V,31A,200W,0.5Us,TO-264,Toshiba
N-channel iso-gate bipolar transistor (MOS technology),N CHANNEL IGBT, 900V, 31A, 200W..
33.60 лв.