Поради голямото натоварване на онлайн магазина, заявки(покупки), които са постъпили в сайта през текущия ден и при налични количества на артикулите се обработват и изпращат към клиента в рамките на 3 до 6 работни дни.

Транзистори MOS-N-IGBT

Транзистори MOS-N-IGBT

IGBT-N-ch MOSFET,600V,15A,35W,0.4uS,TO-220F,Toshiba 15J301

IGBT-N-ch MOSFET,600V,15A,35W,0.4uS,TO-220F,Toshiba 15J301

Код за поръчка: : GT 15J301

IGBT-N-ch MOSFET,600V,15A,35W,0.4uS,TO-220F,Toshiba 15J301 GT15J301 Toshiba..

4.20 лв.

Производител : Toshiba
IGBT-N-MOS,L,1200V,30A,217W,19/43nS,free-wheel Di,TO-247AC,G15H1203 Infineon

IGBT-N-MOS,L,1200V,30A,217W,19/43nS,free-wheel Di,TO-247AC,G15H1203 Infineon

Код за поръчка: : IGW 15N120 H3

IGBT-N-MOS,L,1200V,30A,217W,19/43nS,free-wheel Di,TO-247AC,G15H1203 Infineon Transistor:IGBT;1200V;3..

7.80 лв.

Производител : Infineon
IGBT-N chan,600V,7A,62W,Tf=19nS,TO-220AB,GP8N60KD

IGBT-N chan,600V,7A,62W,Tf=19nS,TO-220AB,GP8N60KD

Код за поръчка: : STGP 8NC60 KD

IGBT-N chan,600V,7A,62W,Tf=19nS,TO-220AB,GP8N60KD Производител ST MICROELECTRONICS Тип транзистор..

3.18 лв.

Производител : STM
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,M50D060S Fuji

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,M50D060S Fuji

Код за поръчка: : M 50D060 S

IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,M50D060S Fuji Fuji M50D0..

12.00 лв.

Производител : Fuji
IGBT-N chan,Ignition,650V,40A,288W,Tf=130nS,TO-3P-3L,MGF65A4R Sharcoh/SanKen

IGBT-N chan,Ignition,650V,40A,288W,Tf=130nS,TO-3P-3L,MGF65A4R Sharcoh/SanKen

Код за поръчка: : MGF 65A4 R

IGBT-N chan,Ignition,650V,40A,288W,Tf=130nS,TO-3P-3L,MGF65A4R Sharcoh/SanKen IGBT Transistor MGF65A4..

6.60 лв.

Производител : SanKen
IGBT-N chan,SMPS-ser.,600V,54A(25°C)/56A(110°C),167W,Tf=38nS(150°C),TO-247,12N60A4 Fairchild

IGBT-N chan,SMPS-ser.,600V,54A(25°C)/56A(110°C),167W,Tf=38nS(150°C),TO-247,12N60A4 Fairchild

Код за поръчка: : HGTG 12N60 A4

IGBT-N chan,SMPS-ser.,600V,54A(25°C)/56A(110°C),167W,Tf=38nS(150°C),TO-247,12N60A4 Fairchild ON Semi..

5.40 лв.

Производител : Fairchild
MOS-N-IGBT,L,600V,14A(25°C),38W,Ultra fast 80kHz,>200kHz in rezonant mode,TO-220AR,G4BC10SD,IR

MOS-N-IGBT,L,600V,14A(25°C),38W,Ultra fast 80kHz,>200kHz in rezonant mode,TO-220AR,G4BC10SD,IR

Код за поръчка: : IRG 4BC10 SD

MOS-N-IGBT,L,600V,14A(25°C),38W,Ultra fast 80kHz,>200kHz in rezonant mode,TO-220AR,G4BC10SD,IRBUP 40..

6.00 лв.

Производител : IR
IGBT-N chan,600V,7A,28W,Tf=35nS,TO-220FP,code: GF14N60KD STMicroelectronics ,STGF14NC60KD

IGBT-N chan,600V,7A,28W,Tf=35nS,TO-220FP,code: GF14N60KD STMicroelectronics ,STGF14NC60KD

Код за поръчка: : STGF 14NC60 KD

IGBT-N chan,600V,7A,28W,Tf=35nS,TO-220FP,code: GF14N60KD STMicroelectronics ,STGF14NC60KDSTGF14NC60K..

4.20 лв.

Производител : STM
IGBT-N channel,630V,35A(25°C),25W,Tf=60nS,TO-263 ,RJP63K2 Renesas

IGBT-N channel,630V,35A(25°C),25W,Tf=60nS,TO-263 ,RJP63K2 Renesas

Код за поръчка: : RJP 63K2

IGBT-N channel,630V,35A(25°C),25W,Tf=60nS,TO-263 ,RJP63K2 RenesasIGBT-N channel,630V,35A(25°C),25W,T..

12.00 лв.

Производител : Renesas
MOS-N-IGBT+Di,HiPerFAST,600V,60A,75A-at 25°C,380W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH60N60C3D1

MOS-N-IGBT+Di,HiPerFAST,600V,60A,75A-at 25°C,380W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH60N60C3D1

Код за поръчка: : IXGH 60N60 C3D1

MOS-N-IGBT+Di,HiPerFAST,600V,60A,75A-at 25°C,380W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH60N60C3D1Ixys IX..

21.60 лв.

Производител : Ixys
IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1

IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1

Код за поръчка: : IGW 30N60 H3

IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1code: G4..

20.00 лв.

Производител : IR
MOS-N-FET,E-series ,600V,18A,30A(25°C),37W,Tf=32-63nS,TO-220F,code: F30N60E ,Vishay Siliconix SIHF30N60E-GE3

MOS-N-FET,E-series ,600V,18A,30A(25°C),37W,Tf=32-63nS,TO-220F,code: F30N60E ,Vishay Siliconix SIHF30N60E-GE3

Код за поръчка: : SiHF 30N60 E

MOS-N-FET,E-series ,600V,18A,30A(25°C),37W,Tf=32-63nS,TO-220F,code: F30N60E ,Vishay Siliconix SIHF30..

15.00 лв.

Производител : Vishay
MOS-N-FET,E-series ,600V,19A,30A(25°C),90W,Tf=31-57nS,TO-220F,code: 30N60S1 ,Fuji Electric FMV30N60S1

MOS-N-FET,E-series ,600V,19A,30A(25°C),90W,Tf=31-57nS,TO-220F,code: 30N60S1 ,Fuji Electric FMV30N60S1

Код за поръчка: : FMV 30N60 S1

MOS-N-FET,E-series ,600V,19A,30A(25°C),90W,Tf=31-57nS,TO-220F,code: 30N60S1 ,Fuji Electric FMV30N60S..

15.00 лв.

Производител : Fuji
IGBT-N chan,600V,41A,30A(25°C),250W,Tf=93-419nS,TO-220AC,code: FQP30N60 Fairchild

IGBT-N chan,600V,41A,30A(25°C),250W,Tf=93-419nS,TO-220AC,code: FQP30N60 Fairchild

Код за поръчка: : FQP 30N60

IGBT-N chan,600V,41A,30A(25°C),250W,Tf=93-419nS,TO-220AC,code: FQP30N60 FairchildTO-220AC code: FQP3..

6.60 лв.

Производител : Fairchild
IGBT-N channel,630V,40A(25°C),30W,Tf=0.07uS,TO-220FL ,RJP63F3 Renesas ,RJP63F3DPP-M0

IGBT-N channel,630V,40A(25°C),30W,Tf=0.07uS,TO-220FL ,RJP63F3 Renesas ,RJP63F3DPP-M0

Код за поръчка: : RJP 63F3

IGBT-N channel,630V,40A(25°C),30W,Tf=0.07uS,TO-220FL ,RJP63F3 Renesas ,RJP63F3DPP-M0..

12.00 лв.

Производител : Renesas
Показани 106 от 120 | 126 (9 Страници)