Транзистори MOS-N-IGBT
IGBT-N-ch MOSFET,400V,120A,25W,0.3uS,TO-220F,Toshiba GT30G122
IGBT-N-ch MOSFET,400V,120A,25W,0.3uS,TO-220F,Toshiba GT30G122Transistor GT30G122-F Toshiba for Pion..
12.00 лв.
IGBT-N-ch MOSFET,600V,20A,45W,40nS,TO-220F/TO-220F , Toshiba GT20J321 ,code:20J321
IGBT-N-ch MOSFET,600V,20A,45W,40nS,TO-220F/TO-220F , Toshiba GT20J321 ,code:20J321IGBT TRANSISTOR,GT..
9.00 лв.
IGBT-N-ch MOSFET,360V,200A,140W,0.3uS,TO-220SM,Toshiba GT30F131
IGBT-N-ch MOSFET,360V,200A,140W,0.3uS,TO-220SM,Toshiba GT30F131GT30F131 IGBT Transistor TO-220SM(MXN..
14.40 лв.
MOS-N-IGBT,L,600V,23A(25°C),100W,Ultra fast 8-40kHz,>200kHz in rezonant mode,TO-220AB,code:G4BC30W,IR /Infineon Technologies
MOS-N-IGBT,L,600V,23A(25°C),100W,Ultra fast 8-40kHz,>200kHz in rezonant mode,TO-220AB,code:G4BC30W,I..
5.00 лв.
IGBT-N chan,SMPS-ser.,1200V,35A(25°C),298W,Tf=34nS(150°C),TO-263AB/DPak,Fairchild,code:10N120BN
IGBT-N chan,SMPS-ser.,1200V,35A(25°C),298W,Tf=34nS(150°C),TO-263AB/DPak,Fairchild,code:10N120BN ONS ..
3.60 лв.
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,1MBH50D-060S Fuji
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,1MBH50D-060S Fuji Fuji 1..
13.00 лв.
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,160W,Tf=82nS,TO-247 isoplus Infineon,G4PC40S
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,160W,Tf=82nS,TO-247 isoplus Infineon,G4PC40S IRG4PC40SPBF ..
20.00 лв.
MOS-N-IGBT+Di,HiPerFAST,600V,30A,220W,Tf=47nS,40-100kHz,TO-247 Ixys IXGH30N60C3C1
MOS-N-IGBT+Di,HiPerFAST,600V,30A,220W,Tf=47nS,40-100kHz,TO-247 Ixys IXGH30N60C3C1 Ixys IXGH30N60C3C1..
17.40 лв.
MOS-N,IGBT,650V,40A,375W,0.27om(23A),80nS,TO-247,Magna Chip 40T65FDSC
MOS-FET,N,IGBT,650V,40A,375W,0.27om(23A),80nS,TO-247,Magna Chip 40T65FDSC Transistor MBQ40T65FDSC, N..
9.00 лв.
IGBT-N chan,600V,9A,25W,Tf=33-108nS,TO-220FP,code: GF10N60KD STMicroelectronics STGF10NC60KD
IGBT-N chan,600V,9A,25W,Tf=33-108nS,TO-220FP,code: GF10N60KD STMicroelectronics STGF10NC60KDManufact..
6.00 лв.
IGBT-N chan,600V,10A,65W,Tf=19nS,TO-220AB,code: GP10NC60KD ,STGP10NC60KD STMicroelectronics
IGBT-N chan,600V,10A,65W,Tf=19nS,TO-220AB,code: GP10NC60KD ,STGP10NC60KD STMicroelectronicsПроизводи..
6.00 лв.
IGBT-N-MOS,L,1200V,15(30)A,217W,19/43nS,free-wheel Di,TO-247AC,K15H1203 Infineon
IGBT-N-MOS,L,1200V,15(30)A,217W,19/43nS,free-wheel Di,TO-247AC,K15H1203 InfineonINFINEON TECHNOLOGIE..
12.00 лв.
IGBT-N-ch MOSFET,600V,15A,35W,0.4uS,TO-220F,Toshiba 15J301
IGBT-N-ch MOSFET,600V,15A,35W,0.4uS,TO-220F,Toshiba 15J301 GT15J301 Toshiba..
4.20 лв.
IGBT-N-MOS,L,1200V,30A,217W,19/43nS,free-wheel Di,TO-247AC,G15H1203 Infineon
IGBT-N-MOS,L,1200V,30A,217W,19/43nS,free-wheel Di,TO-247AC,G15H1203 Infineon Transistor:IGBT;1200V;3..
7.80 лв.
IGBT-N chan,600V,7A,62W,Tf=19nS,TO-220AB,GP8N60KD
IGBT-N chan,600V,7A,62W,Tf=19nS,TO-220AB,GP8N60KD Производител ST MICROELECTRONICS Тип транзистор..
3.18 лв.