Транзистори MOS-N-IGBT

Транзистори MOS-N-IGBT

L,600V,23A(25°C)/12A(100°C),100/42W,140/250nS,Vce(on)=2.7V,TO-220AB

L,600V,23A(25°C)/12A(100°C),100/42W,140/250nS,Vce(on)=2.7V,TO-220AB

Код за поръчка: : IRGBC 30 UD2

L,600V,23A(25°C)/12A(100°C),100/42W,140/250nS,Vce(on)=2.7V,TO-220AB..

L,900V,9A(25°C)/5.3A(100°C),60/24W,29/240nS,Vce(on)=4.3V,TO-220AB

L,900V,9A(25°C)/5.3A(100°C),60/24W,29/240nS,Vce(on)=4.3V,TO-220AB

Код за поръчка: : IRGBF 20 F

L,900V,9A(25°C)/5.3A(100°C),60/24W,29/240nS,Vce(on)=4.3V,TO-220AB..

L,900V,20A(25°C)/11A(100°C),100/42W,27/250nS,Vce(on)=3.7V,TO-220AB

L,900V,20A(25°C)/11A(100°C),100/42W,27/250nS,Vce(on)=3.7V,TO-220AB

Код за поръчка: : IRGBF 30 F

L,900V,20A(25°C)/11A(100°C),100/42W,27/250nS,Vce(on)=3.7V,TO-220AB..

L,900V,30A(25°C)/19A(100°C),160/92W,27/250nS,TO-220AB

L,900V,30A(25°C)/19A(100°C),160/92W,27/250nS,TO-220AB

Код за поръчка: : IRGBF 40 F

L,900V,30A(25°C)/19A(100°C),160/92W,27/250nS,TO-220AB..

IGBT-N,L,1200V,40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AD,IR,GP20B120UD

IGBT-N,L,1200V,40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AD,IR,GP20B120UD

Код за поръчка: : IRGP 20B120 UD

IGBT-N,L,1200V,40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AD,IR,GP20B120UDINFINE..

15.00 лв.

Производител : Infineon
IGBT-N,L,1200V,20/40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B120U-E

IGBT-N,L,1200V,20/40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B120U-E

Код за поръчка: : IRGP 20B120 U

IGBT-N,L,1200V,20/40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B120U-E I..

11.40 лв.

Производител : Infineon
SMPS IGBT,L,600V,40A(25°C),220W,5ns,up 150kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B60PD

SMPS IGBT,L,600V,40A(25°C),220W,5ns,up 150kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B60PD

Код за поръчка: : IRGP 20B60 PD

SMPS IGBT,L,600V,40A(25°C),220W,5ns,up 150kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B60PD..

30.00 лв.

IGBT-N,L,600V,24/48A(25°C),250W,24-40ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,IRGP4062DP ,code:GP4062D

IGBT-N,L,600V,24/48A(25°C),250W,24-40ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,IRGP4062DP ,code:GP4062D

Код за поръчка: : IRGP 4062 DP

IGBT-N,L,600V,24/48A(25°C),250W,24-40ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,IRGP4062DP ..

24.00 лв.

Производител : IR
IGBT-N chan,600V,22A(25°C),104-156W,Tf=32nS,-40°C...+175°C,TO-263/D2-Pak,IR IRGS10B60KDTRRPBF

IGBT-N chan,600V,22A(25°C),104-156W,Tf=32nS,-40°C...+175°C,TO-263/D2-Pak,IR IRGS10B60KDTRRPBF

Код за поръчка: : IRGS 10B60 KD

IGBT-N chan,600V,22A(25°C),104-156W,Tf=32nS,-40°C...+175°C,TO-263/D2-Pak,IR IRGS10B60KDTRRPBFManufac..

16.20 лв.

Производител : IR
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=82nS,TO-247 isoplus Ixys

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=82nS,TO-247 isoplus Ixys

Код за поръчка: : IXGR 40N60 B2D1

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=82nS,TO-247 isoplus Ixys IXGR40N60B2D1 - IGBT Sin..

36.00 лв.

Производител : Ixys
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=32nS,TO-247 isoplus,Ixys

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=32nS,TO-247 isoplus,Ixys

Код за поръчка: : IXGR 40N60 C2D1

MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=32nS,TO-247 isoplus,Ixys Housing Type: TO-247 Manu..

21.84 лв.

Производител : Ixys
IGBT-N chan,SMPS-ser.,600V,70A(25°C)/56A(110°C),290W,Tf=38nS(150°C),TO-247S,Fuji

IGBT-N chan,SMPS-ser.,600V,70A(25°C)/56A(110°C),290W,Tf=38nS(150°C),TO-247S,Fuji

Код за поръчка: : M 50D060 S TO-247

IGBT-N chan,SMPS-ser.,600V,70A(25°C)/56A(110°C),290W,Tf=38nS(150°C),TO-247S,FujiTransistir Fuji M50D..

12.00 лв.

Производител : Fuji
IGBT-N chan+diode,Ignition,440V,15A,150W,Tf=13-20nS,TO-230,MGP15N40CLG ON Semiconductor

IGBT-N chan+diode,Ignition,440V,15A,150W,Tf=13-20nS,TO-230,MGP15N40CLG ON Semiconductor

Код за поръчка: : MGP 15N40 CLG

IGBT-N chan+diode,Ignition,440V,15A,150W,Tf=13-20nS,TO-230,MGP15N40CLG ON Semiconductor IGBT Transis..

10.56 лв.

Производител : ONS
MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60

MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60

Код за поръчка: : MGW 30N60

MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60MGW30N60 TRANSISTORS ,BUP 604, ..

Производител : Motorola
IGBT-N chan + Di,330V,50A(25°C)120W,Tf=150nS,TO-247S,Renesas

IGBT-N chan + Di,330V,50A(25°C)120W,Tf=150nS,TO-247S,Renesas

Код за поръчка: : RJH 3047

IGBT-N chan + Di,330V,50A(25°C)120W,Tf=150nS,TO-247S,Renesas from Samsung BN96-06519A Y-Main Board C..

12.00 лв.

Производител : Renesas
Показани 61 от 75 | 143 (10 Страници)