Транзистори MOS-N-IGBT
L,600V,23A(25°C)/12A(100°C),100/42W,140/250nS,Vce(on)=2.7V,TO-220AB
L,600V,23A(25°C)/12A(100°C),100/42W,140/250nS,Vce(on)=2.7V,TO-220AB..
L,900V,9A(25°C)/5.3A(100°C),60/24W,29/240nS,Vce(on)=4.3V,TO-220AB
L,900V,9A(25°C)/5.3A(100°C),60/24W,29/240nS,Vce(on)=4.3V,TO-220AB..
L,900V,20A(25°C)/11A(100°C),100/42W,27/250nS,Vce(on)=3.7V,TO-220AB
L,900V,20A(25°C)/11A(100°C),100/42W,27/250nS,Vce(on)=3.7V,TO-220AB..
L,900V,30A(25°C)/19A(100°C),160/92W,27/250nS,TO-220AB
L,900V,30A(25°C)/19A(100°C),160/92W,27/250nS,TO-220AB..
IGBT-N,L,1200V,40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AD,IR,GP20B120UD
IGBT-N,L,1200V,40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AD,IR,GP20B120UDINFINE..
15.00 лв.
IGBT-N,L,1200V,20/40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B120U-E
IGBT-N,L,1200V,20/40A(25°C),300W,20ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B120U-E I..
11.40 лв.
SMPS IGBT,L,600V,40A(25°C),220W,5ns,up 150kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B60PD
SMPS IGBT,L,600V,40A(25°C),220W,5ns,up 150kHz,+ultrafast soft recov.diode,TO-247AC,IR,GP20B60PD..
30.00 лв.
IGBT-N,L,600V,24/48A(25°C),250W,24-40ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,IRGP4062DP ,code:GP4062D
IGBT-N,L,600V,24/48A(25°C),250W,24-40ns,up 20kHz,+ultrafast soft recov.diode,TO-247AC,IR,IRGP4062DP ..
24.00 лв.
IGBT-N chan,600V,22A(25°C),104-156W,Tf=32nS,-40°C...+175°C,TO-263/D2-Pak,IR IRGS10B60KDTRRPBF
IGBT-N chan,600V,22A(25°C),104-156W,Tf=32nS,-40°C...+175°C,TO-263/D2-Pak,IR IRGS10B60KDTRRPBFManufac..
16.20 лв.
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=82nS,TO-247 isoplus Ixys
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=82nS,TO-247 isoplus Ixys IXGR40N60B2D1 - IGBT Sin..
36.00 лв.
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=32nS,TO-247 isoplus,Ixys
MOS-N-IGBT,HiPerFAST,IGBT-N chan,600V,60A,167W,Tf=32nS,TO-247 isoplus,Ixys Housing Type: TO-247 Manu..
21.84 лв.
IGBT-N chan,SMPS-ser.,600V,70A(25°C)/56A(110°C),290W,Tf=38nS(150°C),TO-247S,Fuji
IGBT-N chan,SMPS-ser.,600V,70A(25°C)/56A(110°C),290W,Tf=38nS(150°C),TO-247S,FujiTransistir Fuji M50D..
12.00 лв.
IGBT-N chan+diode,Ignition,440V,15A,150W,Tf=13-20nS,TO-230,MGP15N40CLG ON Semiconductor
IGBT-N chan+diode,Ignition,440V,15A,150W,Tf=13-20nS,TO-230,MGP15N40CLG ON Semiconductor IGBT Transis..
10.56 лв.
MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60
MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60MGW30N60 TRANSISTORS ,BUP 604, ..
IGBT-N chan + Di,330V,50A(25°C)120W,Tf=150nS,TO-247S,Renesas
IGBT-N chan + Di,330V,50A(25°C)120W,Tf=150nS,TO-247S,Renesas from Samsung BN96-06519A Y-Main Board C..
12.00 лв.