MOS-N-IGBT,L,600V/15A , 26A(25°C),130W,87nS, -40..+175°C , TO-220AB ,code: K15N60T ,Infineon Technologies IKP15N60TXKSA1

MOS-N-IGBT,L,600V/15A , 26A(25°C),130W,87nS, -40..+175°C , TO-220AB ,code: K15N60T ,Infineon Technol..

9.00 лв.

IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-220AC ,code: G30H603 , Infineon IGP30N60H3XKSA1

IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-220AC ,code: G30H603 , Infineon IGP30N60H3XKSA1..

10.00 лв.

MOS-N-FET-e, 200V, 96A, 600W,Qg=145nS,0.24mOm,-55...+175°C ,TO-3P , Ixys IXTQ96N20P

MOS-N-FET-e, 200V, 96A, 600W,Qg=145nS,0.24mOm,-55...+175°C ,TO-3P , Ixys IXTQ96N20PTransistor MOSFET..

18.00 лв.

IGBT-N channel,360V,35A(25°C),25W, Tf=0.15uS,TO-220F ,Renesas RJP30Y2A ,RJP30Y2ADPE

IGBT-N channel,360V,35A(25°C),25W, Tf=0.15uS,TO-220F ,Renesas RJP30Y2A ,RJP30Y2ADPETransistors RJP30..

6.00 лв.

IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D4-H

IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D4-HT..

25.00 лв.

IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D1-B

IGBT-N chan,UFS-ser.,600V,240A(25°C)/160A(100°C),750/375W,Tf=51nS(150°C),TO-247/274A , AUPS4067D4-HT..

25.00 лв.

IGBT-N,L,600V,75A(25°C), 454W, 50-70ns, up 20kHz,+ ultrafast soft recovery diode,TO-247AC,IR IRGP4066DP ,code:GP4066D

IGBT-N,L,600V,75A(25°C), 454W, 50-70ns, up 20kHz,+ ultrafast soft recovery diode,TO-247AC,IR IRGP406..

15.00 лв.

IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-247 ,code: G30H603 , Infineon IGW30N60H3FKSA1

IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-247 ,code: G30H603 , Infineon IGW30N60H3FKSA1I..

18.00 лв.