Транзистори MOS-N-IGBT
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,M50D060S Fuji
IGBT-N chan,SMPS-ser.,600V,75A(25°C)/50A(100°C),230W,Tf=0.1uS(150°C),TO-3PL,M50D060S Fuji Fuji M50D0..
12.00 лв.
IGBT-N chan,Ignition,650V,40A,288W,Tf=130nS,TO-3P-3L,MGF65A4R Sharcoh/SanKen
IGBT-N chan,Ignition,650V,40A,288W,Tf=130nS,TO-3P-3L,MGF65A4R Sharcoh/SanKen IGBT Transistor MGF65A4..
6.60 лв.
IGBT-N chan,SMPS-ser.,600V,54A(25°C)/56A(110°C),167W,Tf=38nS(150°C),TO-247,12N60A4 Fairchild
IGBT-N chan,SMPS-ser.,600V,54A(25°C)/56A(110°C),167W,Tf=38nS(150°C),TO-247,12N60A4 Fairchild ON Semi..
5.40 лв.
MOS-N-IGBT,L,600V,14A(25°C),38W,Ultra fast 80kHz,>200kHz in rezonant mode,TO-220AR,G4BC10SD,IR
MOS-N-IGBT,L,600V,14A(25°C),38W,Ultra fast 80kHz,>200kHz in rezonant mode,TO-220AR,G4BC10SD,IRBUP 40..
6.00 лв.
IGBT-N chan,600V,7A,28W,Tf=35nS,TO-220FP,code: GF14N60KD STMicroelectronics ,STGF14NC60KD
IGBT-N chan,600V,7A,28W,Tf=35nS,TO-220FP,code: GF14N60KD STMicroelectronics ,STGF14NC60KDSTGF14NC60K..
4.20 лв.
IGBT-N channel,630V,35A(25°C),25W,Tf=60nS,TO-263 ,RJP63K2 Renesas
IGBT-N channel,630V,35A(25°C),25W,Tf=60nS,TO-263 ,RJP63K2 RenesasIGBT-N channel,630V,35A(25°C),25W,T..
12.00 лв.
MOS-N-IGBT+Di,HiPerFAST,600V,60A,75A-at 25°C,380W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH60N60C3D1
MOS-N-IGBT+Di,HiPerFAST,600V,60A,75A-at 25°C,380W,Tf=50nS,40-100kHz,TO-247 Ixys IXGH60N60C3D1Ixys IX..
21.60 лв.
IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1
IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1code: G4..
18.00 лв.
MOS-N-FET,E-series ,600V,18A,30A(25°C),37W,Tf=32-63nS,TO-220F,code: F30N60E ,Vishay Siliconix SIHF30N60E-GE3
MOS-N-FET,E-series ,600V,18A,30A(25°C),37W,Tf=32-63nS,TO-220F,code: F30N60E ,Vishay Siliconix SIHF30..
15.00 лв.
MOS-N-FET,E-series ,600V,19A,30A(25°C),90W,Tf=31-57nS,TO-220F,code: 30N60S1 ,Fuji Electric FMV30N60S1
MOS-N-FET,E-series ,600V,19A,30A(25°C),90W,Tf=31-57nS,TO-220F,code: 30N60S1 ,Fuji Electric FMV30N60S..
15.00 лв.
IGBT-N chan,600V,41A,30A(25°C),250W,Tf=93-419nS,TO-220AC,code: FQP30N60 Fairchild
IGBT-N chan,600V,41A,30A(25°C),250W,Tf=93-419nS,TO-220AC,code: FQP30N60 FairchildTO-220AC code: FQP3..
6.60 лв.
IGBT-N channel,630V,40A(25°C),30W,Tf=0.07uS,TO-220FL ,RJP63F3 Renesas ,RJP63F3DPP-M0
IGBT-N channel,630V,40A(25°C),30W,Tf=0.07uS,TO-220FL ,RJP63F3 Renesas ,RJP63F3DPP-M0..
12.00 лв.
MOS-N-IGBT,L,600V/15A , 26A(25°C),130W,87nS, -40..+175°C , TO-220AB ,code: K15N60T ,Infineon Technologies IKP15N60TXKSA1
MOS-N-IGBT,L,600V/15A , 26A(25°C),130W,87nS, -40..+175°C , TO-220AB ,code: K15N60T ,Infineon Technol..
9.00 лв.
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-220AC ,code: G30H603 , Infineon IGP30N60H3XKSA1
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-220AC ,code: G30H603 , Infineon IGP30N60H3XKSA1..
10.00 лв.
MOS-N-FET-e, 200V, 96A, 600W,Qg=145nS,0.24mOm,-55...+175°C ,TO-3P , Ixys IXTQ96N20P
MOS-N-FET-e, 200V, 96A, 600W,Qg=145nS,0.24mOm,-55...+175°C ,TO-3P , Ixys IXTQ96N20PTransistor MOSFET..
18.00 лв.