Транзистори MOS-N-IGBT
Транзистори MOS-N-IGBT
MOS-N-IGBT,L,600V,23A(25°C),100W,Ultra fast 8-40kHz,>200kHz in rezonant mode,TO-220AB,code:G4BC30W,IR /Infineon Technologies
Код за поръчка: : IKP 15N60 T
MOS-N-IGBT,L,600V,23A(25°C),100W,Ultra fast 8-40kHz,>200kHz in rezonant mode,TO-220AB,code:G4BC30W,I..
9.00 лв.
Производител : Infineon
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-220AC ,code: G30H603 , Infineon IGP30N60H3XKSA1
Код за поръчка: : IGP 30N60 H3
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-220AC ,code: G30H603 , Infineon IGP30N60H3XKSA1..
10.00 лв.
Производител : Infineon
MOS-N-FET-e, 200V, 96A, 600W,Qg=145nS,0.24mOm,-55...+175°C ,TO-3P , Ixys IXTQ96N20P
Код за поръчка: : IXTQ 96N20 P
MOS-N-FET-e, 200V, 96A, 600W,Qg=145nS,0.24mOm,-55...+175°C ,TO-3P , Ixys IXTQ96N20PTransistor MOSFET..
18.00 лв.
Производител : Ixys
IGBT-N channel,360V,35A(25°C),25W, Tf=0.15uS,TO-220F ,Renesas RJP30Y2A ,RJP30Y2ADPE
Код за поръчка: : RJP 30 Y2A
IGBT-N channel,360V,35A(25°C),25W, Tf=0.15uS,TO-220F ,Renesas RJP30Y2A ,RJP30Y2ADPETransistors RJP30..
6.00 лв.
Производител : Renesas